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MOSFETs ASM Integrated Circuit

机译:MOSFET ASM集成电路

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摘要

This paper discusses and demonstrates the performance of integrated MOSFET and driver products. In order to develop the devices, it was necessary to understand the requirements of the synchronous-buck circuit topology, optimize the silicon process to provide optimum switching and lower cross-conduction losses, and develop packaging technology that provides compact and easy assembly. Experimental and simulation results show good performance for core voltage power supplies and point of load (POL) converters. Switching and conduction loss and drive capability is not covered in this paper.
机译:本文讨论并演示了集成MOSFET和驱动器产品的性能。为了开发这些器件,有必要了解同步降压电路拓扑的要求,优化硅工艺以提供最佳开关和较低的交叉传导损耗,并开发提供紧凑且易于组装的封装技术。实验和仿真结果表明,核心电压电源和负载点(POL)转换器具有良好的性能。本文不涉及开关和传导损耗以及驱动能力。

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