A Revised PSPICE MOSFET Model Incorporating Self-Heating Effect

摘要

An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model is highly accurate and is recognized in the industry. Simulation responses of the new self-heating MOSFET model track the dynamic thermal response independently of SPICE's global temperature definition. Existing models may be upgraded to self-heating models with relative ease.