首页> 外文会议>International Conference on Processing amp; Manufacturing of Advanced Materials Pt.5; Jul 7-11, 2003; Leganes, Madrid, Spain >Properties of AIN Powders Synthesized by Rapid Nitridation of Al Powder in Floating System
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Properties of AIN Powders Synthesized by Rapid Nitridation of Al Powder in Floating System

机译:浮选体系中Al粉的快速氮化合成AIN粉体的性能。

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Synthesis method of fine and pure AlN powder from Al powder by means of floating-type fluidized-bed was investigated. Concentration of oxygen and water vapor in reacting nitrogen was carefully controlled in the range 4 to 600 ppm. Ultrapure Al powder as a raw material was continuously fed into nitrogen stream with a flow rate of 1.6 cm/s from the end of the reactor, and was nitrided at 1550℃. AlN powders which were nitrided in nitrogen containing oxygen and/or water vapor in the range 50 to 100 ppm, were considered to be suitable for fabrication of high thermal conductive ceramics, because the resulting AlN powders were perfectly nitrided and the color of them was pure white indicating the powders being ultrapure. The amounts of impurities such as metals and oxygen content in the powders were extremely low. The powders were composed of primary particles with 0.1 to 0.2 mm in size and specific surface areas of them were 10.0 m~2/g. The formation process of the fine AlN powder was presumed to be constituted of several elementary reaction steps involving explosive and combustive nilridation of Al particles. The AlN powder had good sinterability, and high thermal conductive AlN ceramics with value of 255 W/mK could be obtained by sintering at 1900℃ for 32 hours in a nitrogen with aid of 3wt% to5wt% Y_2O_3. Neither pore nor precipitation of the second phase was observed at the grain boundary, and then the extensive grain growth was observed.
机译:研究了用浮式流化床从铝粉中合成纯铝粉的方法。将反应的氮气中的氧气和水蒸气的浓度小心地控制在4至600ppm的范围内。从反应器末端开始,以1.6 cm / s的流速将超纯Al粉作为原料连续进料到氮气流中,并在1550℃进行氮化。被认为在50至100 ppm的含氮氧气和/或水蒸气中氮化的AlN粉末适合于制造高导热陶瓷,因为所得的AlN粉末被完全氮化且其颜色纯净白色,表明粉末超纯。粉末中的杂质如金属和氧气含量极低。粉末由尺寸为0.1至0.2mm的初级颗粒组成,并且它们的比表面积为10.0m 2 / g。推测AlN细粉的形成过程由几个基本反应步骤组成,这些步骤涉及爆炸性和燃烧性氮化铝颗粒。该AlN粉末具有良好的可烧结性,在3wt%至5wt%的Y_2O_3的辅助下,于1900℃在氮气中烧结32小时,可获得255 W / mK的高导热AlN陶瓷。在晶界处未观察到第二相的孔或沉淀,然后观察到广泛的晶粒生长。

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