Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, Sichuan, China 621999;
School of Information Engineering, Southwest University of Science and Technology, Mianyang, Sichuan, China 621010;
School of Information Engineering, Southwest University of Science and Technology, Mianyang, Sichuan, China 621010,National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology (Chongqing University), Chongqing, China 400044;
School of Information Engineering, Southwest University of Science and Technology, Mianyang, Sichuan, China 621010,State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics, CAS, Beijing 100049;
RF MEMS; capacitive switch; dielectric layer; roughness; latching; down-state capacitance; degradation;
机译:具有ALN的穿孔蛇形膜作为介电材料分流电容式RF MEMS开关制造和表征
机译:MEMS电容开关介电充电评估的上拉电容-电压特性深度分析
机译:电容RF MEMS开关应用中多层介质堆叠中电荷注入和弛豫的研究
机译:具有粗介质层电容式RF MEMS开关的下态电容劣化的表征
机译:RF MEMS电容开关中介电充电效应的表征和建模
机译:具有气溶胶沉积的高K介电层的叉指电容器在电容式超感测应用中具有最高的电容值
机译:驱动MEMS欧姆系列和电容并联开关的介电中充电效应的表征和建模
机译:用于射频mEms电容开关的替代介电薄膜,使用原子层沉积的al2O3 / ZnO合金沉积