首页> 外文会议>International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP >Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN
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Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN

机译:梯度AlGaN中极化掺杂3D电子平板的有效质量,量子散射时间和合金散射势的磁传输测量

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摘要

By applying the technique of polarization bulk-doping in graded AlGaN, it has been possible to create high-mobility three-dimensional electron slabs. Such 3D electron slabs are observed to exhibit clearly resolved Shubnikov de-Haas oscillations. From a temperature-dependent study of the oscillations, we measure the effective mass (m~* = 0.21m_0) and the quantum scattering time (τ_q = 0.3 ps) of carriers in the slabs. An analysis of the ratio of quantum and classical scattering times with the scattering mechanisms leads to the first direct measurement of the alloy scattering potential in the AlGaN system (V_0 = 1.8 eV).
机译:通过在梯度AlGaN中应用极化体掺杂技术,可以制造出高迁移率的三维电子平板。观察到此类3D电子平板显示清晰分辨的Shubnikov de-Haas振荡。通过对温度的振荡研究,我们可以测量平板中载流子的有效质量(m〜* = 0.21m_0)和量子散射时间(τ_q= 0.3 ps)。用散射机理对量子散射时间与经典散射时间之比的分析导致对AlGaN系统中合金散射势的首次直接测量(V_0 = 1.8 eV)。

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