Electron Vortices in Semiconductor Devices

摘要

The hydrodynamic model of electron transport in semiconductors is analyzed and in analogy to fluid mechanics the transport equation for the electron vorticity, V xv, is derived. Aside from the classical hydrodynamic sources of vorticity, collision terms in the continuity and momentum equations may also generate electron vorticity. A scale analysis of the electron vorticity equation is performed and the relative order of magnitude of each source of vorticity is found. These analysis predict conditions for the observation of electron vortices in semiconductor devices.