Equation of p-n Junction for High Current Density Models of Transistor

摘要

The results of theoretical and experimental investigations of p-n junction at junction voltages close to the potential barrier are presented. It is shown that in such a situation the voltage-current characteristic can be described by algebraic equation in explicit form and that exponential description of characteristic is in conflict with physics at junction voltages close to the potential barrier. Possibility to create the transistor models for high current density and possibility to describe on basis of these models in many cases the static parameters of integrated circuits by mathematical expressions in explicit form is the advantage of suggested p-n junction equation.