A Mathematical Model for the Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film

摘要

The analytical models for the electric field and potential distributions are necessary to establish the inversion or accumulation conditions at the front and back interfaces for a lot of SOI devices. The paper refers to a one-dimensional analysis, both for partially and fully depleted devices on films with non-uniform doping. The goal of this paper is to obtain an accurate model of the electric field and potential distribution in the SOI capacitors with gaussian dependence of the doping profile in the film. In the fully depleted film case, the model takes into account the depletion of the silicon substrate. The model has been used for the threshold voltage computing, but they also represent a reference point in the development of news models for SOI-devices fabricated on gaussian profile films. The results were compared with PISCES numerical simulations and were in a good agreement.