Numerical simulation of periodical distribution of antisite defects in irradiated semiconductors

摘要

A simulation of radiation-induced instability in binary semiconductors, such as GaAs, was fulfilled. The instability is connected with antisite defects accumulated. It was shown that the number of antisite defects in crystal under irradiation can significantly exceed their equilibrium concentration. We have found that the instability with respect to periodical defect distribution appears at some conditions of irradiation. The wavelength of the periodical distribution was estimated as 100 nm - 10 μm depending on crystal parameters.