首页> 外文会议>International Conference on High Magnetic Fields in Semiconductor Physics; 20040802-06; Tallahassee,FL(US) >MAGNETIC FIELD ENHANCED BACKSCATTERING OF FOCUSED ELECTRONS IN MESOSCOPIC METALLIC BRIDGES
【24h】

MAGNETIC FIELD ENHANCED BACKSCATTERING OF FOCUSED ELECTRONS IN MESOSCOPIC METALLIC BRIDGES

机译:介电金属桥中聚焦电子的磁场增强后向散射

获取原文
获取原文并翻译 | 示例

摘要

We have observed an increase in the longitudinal magnetoresistance of mesoscopic tungsten bridges at low temperatures. We propose this effect to be caused by backscattering of electrons through spiralling orbits with radius smaller than the film thickness. When tilting the field direction slightly away from the bridge-axis, additional surface scattering leads to an abrupt destruction of this backscattering.
机译:我们已经观察到低温下介观钨桥的纵向磁阻增加。我们认为,这种影响是由于电子通过半径小于薄膜厚度的螺旋轨道的反向散射而引起的。当磁场方向稍微偏离桥轴倾斜时,额外的表面散射会导致反向散射的突然破坏。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号