首页> 外文会议>International Conference on High Magnetic Fields in Semiconductor Physics; 20040802-06; Tallahassee,FL(US) >TUNNELING BETWEEN SPIN POLARIZED EDGE STATES STUDIED AT HIGH MAGNETIC FIELDS
【24h】

TUNNELING BETWEEN SPIN POLARIZED EDGE STATES STUDIED AT HIGH MAGNETIC FIELDS

机译:强磁场中自旋极化边缘态之间的隧道效应

获取原文
获取原文并翻译 | 示例

摘要

We utilize the tunneling between edge states of the lowest Landau level to study the behavior of the spin splitting in a wide range of magnetic fields up to 28 T. We find that the Zeeman energy with the bare |g~*| = 0.44 of GaAs mainly accounts for the observed threshold in the bias voltage between edge states. There is no evidence for the exchange interaction considerably affecting the measured energy gaps at the edge of a two-dimensional electron system.
机译:我们利用最低Landau能级的边缘状态之间的隧穿来研究在高达28 T的宽磁场中自旋分裂的行为。我们发现| g〜* |裸露的塞曼能量GaAs = 0.44主要说明了边缘状态之间的偏置电压中观察到的阈值。没有证据表明交换相互作用会显着影响二维电子系统边缘的测量能隙。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号