首页> 外文会议>International Conference on Diffusion in Solids: Past, Present and Future; 20050523-27; Moscow(RU) >On the Kinetic Mechanism of Ga Penetration in Al Bicrystals under Small Residual Stress
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On the Kinetic Mechanism of Ga Penetration in Al Bicrystals under Small Residual Stress

机译:小残余应力下Al双晶中Ga渗透的动力学机理

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Thermodynamic conditions for spontaneous grain boundary wetting (GBW) and stress driven liquid metal embrittlement (LME) are related to each other. Kinetic mechanism responsible for fast GB penetration (GBP) under small stress is described. Dissolution-condensation mechanism of LME and linear fracture mechanics for calculation of crack profile are applied to the classical system "Al-liquid Ga". The results tend to support the idea that the recently observed fast linear penetration of Ga along 150° tilt < 110 > GB of Al should be considered as propagation of LME crack under small residual stress rather than as spontaneous GBW. With the residual tensile stress σ ≈ 0.5 MPa acting normal to the GB plane, all major findings reported for this model system are explained in semi quantitative way assuming that GB spreading coefficient is extremely small by its absolute value, i.e. that the system is near the threshold of spontaneous GBW .
机译:自发晶界润湿(GBW)和应力驱动的液态金属脆化(LME)的热力学条件彼此相关。描述了在小应力下负责快速GB渗透(GBP)的动力学机制。 LME的溶解-凝结机理和线性断裂力学用于计算裂纹轮廓,被应用于经典系统“ Al-liquid Ga”。结果倾向于支持这样一种观点,即最近观察到的Ga沿150°倾斜<110> GB的Al的快速线性渗透应被认为是在较小残余应力下LME裂纹的扩展,而不是自发的GBW。在残余拉伸应力σ≈0.5 MPa垂直于GB平面作用的情况下,假定GB扩展系数的绝对值极小,即该系统接近于GB,该模型系统报告的所有主要发现均以半定量方式解释。自发性GBW阈值。

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