首页> 外文会议>International Conference on Defects in Semiconductors(ICDS-22); 20030728-20030801; Aarhus; DK >On the formation of boron-germanium pairs in silicon-germanium mixed crystals
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On the formation of boron-germanium pairs in silicon-germanium mixed crystals

机译:硅锗混合晶体中硼锗对的形成

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By the β-NMR technique using polarised ~(12)B nuclei, a cylindrical electric field gradient in boron was detected which is found to be the manifestation of a boron-germanium pair in silicon-germanium mixed crystals. The field gradient is aligned along the < 1 1 1 >-axis of the crystal and has a value of V_(zz) = +3.8(3) V/A~2. Calculations on the basis of a full-potential DFT program delivered values for local bond lengths and electronic charge distributions in impurity complexes and confirmed the above assignment. The probability of the formation of the complex matches with statistical expectations.
机译:通过使用极化的〜(12)B核的β-NMR技术,检测到硼中的圆柱形电场梯度,发现这是硅锗混合晶体中硼锗对的表现。场梯度沿晶体的<1 1 1>轴排列,并且具有V_(zz)= +3.8(3)V / A〜2的值。基于全势DFT程序的计算得出了杂质配合物中的局部键长和电子电荷分布的值,并确认了上述分配。形成复合物的概率与统计预期相符。

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