首页> 外文会议>International conference on advance manufacture;SME ICAM 2007; 20071126-28;20071126-28; Taiwan(CT);Taiwan(CT) >Macro-Micro Modeling Analysis of Melting and Re-solidification of thin Si Films by Excimer Laser Annealing
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Macro-Micro Modeling Analysis of Melting and Re-solidification of thin Si Films by Excimer Laser Annealing

机译:准分子激光退火熔化和再凝固硅薄膜的宏观模型分析

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In this work, an macro-micro model has been developed for the melting and resolidification of thin Si films induced by excimer-laser annealing. The macro-micro model, considering the formation of microstruetures: nucleation and growth, can obtain the better results than macro-models. Except temperature distributions, the macro-micro models can offer more information about solidification process, such as undercooling, grain size, grain density etc. These data could help to predict the physical properties of materials. In this study, the finite difference method is utilized to solve the heat transfer problem. The specific heat/enthalpy method and the source term scheme are employed to handle the absorbed and released latent heat. The algorithm that allows for nucleation is based on classical nucleation theory. Accordingly, the model enables the prediction of grain size, as well as the calculation of other critical responses of the a-Si film, such as undercooling. From the computational results, it can be found that when the laser fluence is higher, the cooling rate after laser irradiation is lower, the maximum undercooling is smaller and the grain size is larger or the grain density is lower. The average grain sizes, obtained from the simulation results of the proposed model, agree fairly well with those from the experimental data reported in the literature. It can also be found that the reflectivity of the surface gives a good way to observe the phase changes and the melting duration.
机译:在这项工作中,已经开发了用于通过准分子激光退火诱导的Si薄膜熔化和再固化的宏观微观模型。考虑到微观结构的形成:成核和生长,宏观微观模型可以获得比宏观模型更好的结果。除了温度分布,宏观模型可以提供有关凝固过程的更多信息,例如过冷,晶粒尺寸,晶粒密度等。这些数据可以帮助预测材料的物理性质。在这项研究中,有限差分法被用来解决传热问题。使用比热/焓法和源项法来处理吸收和释放的潜热。允许成核的算法基于经典成核理论。因此,该模型能够预测晶粒尺寸,并能计算a-Si膜的其他关键响应,例如过冷。从计算结果可以发现,当激光通量较高时,激光辐照后的冷却速率较低,最大过冷度较小,晶粒尺寸较大或晶粒密度较低。从提出的模型的模拟结果获得的平均晶粒尺寸与文献报道的实验数据相当吻合。还可以发现,表面的反射率是观察相变和熔化持续时间的好方法。

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