首页> 外文会议>International Conference on Adaptive Structures and Technologies; 20061016-19; Taipei(TC) >CRITICAL PARAMETERS IN FABRICATING SOL-GEL DERIVED PZT THIN FILMS
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CRITICAL PARAMETERS IN FABRICATING SOL-GEL DERIVED PZT THIN FILMS

机译:制造溶胶凝胶衍生的PZT薄膜的关键参数

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In the last decade, Lead Zirconate Titanate Oxide (PZT) thin-film actuators have received increasing attention because of their high frequency bandwidth, large actuation strength, fast response, and small size. The thickness of PZT thin films is usually less than several microns as opposed to hundreds of microns for bulk PZT patches that are commercially available. Currently, the most promising technique to fabricate PZT thin films is sol-gel processing. Although recipes to fabricate sol-gel derived PZT films have long been available in the literature, critical parameters affecting the yield have not been identified and reported. In this paper, we present an experimental study to identify critical parameters to improve the yield of sol-gel derived PZT thin films. In our experiments, a typical specimen consists of a 3-in. silicon wafer, a Pt/Ti bottom electrode, 3 coats of PZT films with an overall thickness of 1 μm, and 64 Au/Cr top electrodes uniformly distributed over the PZT film. The resistance at each top/bottom electrode pair is measured and screened. If the resistance measurement indicates an open circuit, the film quality at the measurement spot is considered as "good." In addition, the yield is defined as the percentage of good electrodes on each fabricated wafer. Experimental results show that two parameters can significantly affect the yield. The first parameter is porosity of the Pt/Ti electrode. Experimental results show that porosity in the Pt/Ti electrode enhances the yield of sol-gel derived PZT films. The second parameter is the uniformity of Pt/Ti layer's microstructures. SEM photos and water/Pt contact angle measurements indicate that wafers annealed in the horizontal positions have more uniform microstructures and surface properties. The experimental results show that horizontal wafer positions give better yields than vertical wafer positions (e.g., wafers in a boat). Finally, the water/Pt contact angle at the Pt/Ti bottom electrode does not significantly affect the yield, if the bottom electrode is properly annealed. The contact angle, however, can affect the yield, if the bottom electrode is not properly annealed.
机译:在过去的十年中,锆酸钛酸铅(PZT)薄膜致动器因其高频率带宽,大致动强度,快速响应和小尺寸而受到越来越多的关注。 PZT薄膜的厚度通常小于几微米,而商用PZT贴片的厚度通常为几百微米。当前,制造PZT薄膜的最有前途的技术是溶胶-凝胶加工。尽管制备溶胶-凝胶衍生的PZT膜的方法早已在文献中出现,但尚未确定和报道影响产量的关键参数。在本文中,我们提出了一项实验研究,以确定提高溶胶-凝胶衍生的PZT薄膜产率的关键参数。在我们的实验中,典型的标本由3英寸组成。硅晶片,Pt / Ti底部电极,3层总厚度为1μm的PZT膜涂层和64个Au / Cr顶部电极均匀分布在PZT膜上。测量并屏蔽每个上/下电极对的电阻。如果电阻测量表明开路,则在测量点的膜质量被认为是“良好”。此外,成品率定义为每个已加工晶片上良电极的百分比。实验结果表明,两个参数可以显着影响产量。第一个参数是Pt / Ti电极的孔隙率。实验结果表明,Pt / Ti电极中的孔隙率提高了溶胶-凝胶衍生的PZT膜的产率。第二个参数是Pt / Ti层微观结构的均匀性。 SEM照片和水/铂接触角测量表明,在水平位置退火的晶片具有更均匀的微观结构和表面特性。实验结果表明,水平晶片位置比垂直晶片位置(例如船上的晶片)具有更好的产量。最后,如果底部电极经过适当的退火处理,则在Pt / Ti底部电极上的水/ Pt接触角不会显着影响成品率。但是,如果底部电极未正确退火,则接触角会影响成品率。

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