CeO_2 thin films as buffer layers for Si/YBCO integrated microelectronics

摘要

1. XRD and Raman results confirm that deposition temperature of 800℃ leads to better structural quality: larger crystallites, with better preferential (111) orientation, even if cell parameter a_0 is larger than that of stress-free and stoichimetric CeO_2 2. Annealing treatment at 600℃ and 900℃ in N_2 atmosphere slightly affect morphology and structure of CeO_2 films, even if some improvements have been observed from Raman and XRD measurements. Annealing treatment at 900℃ in O_2 strongly reduces the cell parameter: the sample deposited at 800℃ after the treatment reaches value very close to 5.411 A. 3. First steps in the growth of YBCO films on CeO_2 buffered silicon confirm interesting possibilities of obtaining high T_c superconductor-semiconductor integrated devices.