State-of-the-Art MCT Photodiodes for Cutting-Edge Sensor Applications by AIM

摘要

For about 30 years, AIM has been ranking among the leading global suppliers for high-performance MCT infrared detectors, with its portfolio spanning the photosensitivity cut-off range from the SWIR to the VLWIR and from 1st generation to 3rd generation FPA devices. To meet the market demands for SWaP-C- and IR-detectors with additional functionalities such as multicolor detection, AIM employs both LPE and MBE technology. From AIM's line of highest-performance single color detectors fabricated by LPE, we will present our latest excellent results of 5.3 µm cut-off MWIR MCT detectors with 1024x768 pixels and a 10 µm pixel pitch. AIM's powerful low dark current LWIR and VLWIR p-on-n device technology on LPE-grown MCT has now been extended to the MWIR spectral range. A comparison of results from n-on-p and p-on-n MWIR MCT planar photodiode arrays is presented. Operating temperatures of 160 K and higher, in conjunction with low defect density and excellent thermal sensitivity (NETD) are attained. The results achieved for LPE MWIR are compared to MBE MWIR data. For both the cost-efficient production of MWIR single color MCT detectors, as well as 3rd generation multicolor MCT detectors, AIM makes use of MBE growth of MCT on large-area GaAs substrates. The now-available AIM MWIR single color MBE MCT detectors grown on GaAs are qualified, delivered, and have reached a maturity fully meeting customers' requirements. Representing AIM's multicolor detector development, latest test results on a 640x512 pixels with a 20 µm pitch design will be presented. The MWIR/MWIR diodes demonstrate high QE, very low color cross talk, and excellent NETD in conjunction with low defect densities.