NIR Sensors Based on Photolithographically Patterned PbS QD Photodiodes for CMOS Integration

摘要

The integration of infrared sensitive thin-film materials with solution processing capabilities on top of Si substrates is a significant step towards cost-efficient infrared imagers. Colloidal quantum dots based on lead sulfide are very attractive materials for the realization of novel image sensors combining low cost synthesis and processing with deposition over large area and on any substrate. The tunable band gap enables selective detection in wavelengths ranging from the visible up to the short-wave-infrared (SWIR). This work describes the first results of a roadmap that will enable the integration of quantum dot photodiodes (QDPD) on top of a Si based CMOS read-out circuit. Photodiodes using an n-p junction architecture are fabricated on Si substrates, showing low dark current of 30 nA/cm