Ion-implanted and screen-printed large area 19.6% efficient n-type bifacial Si solar cell

摘要

In this paper, we show successful fabrication of high efficiency 19.6 % n-type bifacial solar cells on 239 cm2 Cz using ion implantation of boron and phosphorus along with screen printed metallization. A very low emitter saturation current density (Joe) of 80 fA/cm2 was obtained from re- grown SiO2 caped with SiNx on a chemically etched boron emitter. It is also shown that 8% metallization can raise the boron emitter Joe by ∼85 fA/cm2 and phosphorus BSF Job'' by ∼126 fA/cm2. Detailed cell analysis shows that the high base saturation current density (Job) is a major performance limiting factor in the 19.6% efficient n-type bifacial cell.