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Enhancement of spin hall effect-induced torques for current-driven magnetic domain wall motion: Extrinsic spin hall effect

机译:用于电流驱动磁畴壁运动的自旋霍尔效应感应扭矩的增强:外在自旋霍尔效应

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The current-induced domain wall motion (CIDM) in thin perpendicular magnetized ferromagnetic wires sandwiched between a heavy metal and an oxide has been expected to be very efficient in getting high DW velocity at low current density for developing spintronic devices. The addressed high velocity in these asymmetric wires is attributed to the presence of structural inversion asymmetry (SIA) and/or heavy metals like Pt which can lead to strong spin-orbit interaction (SOI) and induce additional spin-orbit torques (SOTs). Recently, a transition from bulk to interfa-cial effect is confirmed as a change in the DW motion direction at a reduced layer thickness of Co/ Ni multilayer down to 2.1 nm. The adiabatic spin-transfer torque (STT) dominates the DW motion in the thick regime, while the interfacial torque due to the spin Hall effect (SHE) induces DW motion in the thin regime. In an earlier study, however, we can still observe the SOTs-induced DW motion up to a thickness of ~ 10 nm for the asymmetric interfacial wire with the layered structure of SiO/[Tb(3.2 Å)/Co(2.6 Å)]/Pt(20 Å). The high efficiency of SOTs in our wires can be explained by an addition of the extrinsic SHE from Co ultrathin layers due to Tb rare-earth impurity-induced skew scattering in the Co layer with the aid of SOI. In this study, we present the current-induced DW motion in the Tb/Co wires with different layered structures. The extrinsic SHE is tuned by changing the thickness of Co ultrathin layers, number of Tb/Co interfaces, and formation of Tb-Co alloy magnetic layer.
机译:预期在夹在重金属和氧化物之间的垂直的垂直磁化铁磁细线上的电流感应畴壁运动(CIDM)对于在开发自旋电子器件时以低电流密度获得高DW速度非常有效。这些不对称导线中所解决的高速度归因于结构反转不对称(SIA)和/或重金属(如Pt)的存在,它们可能导致强烈的自旋轨道相互作用(SOI)并引起附加的自旋轨道扭矩(SOT)。近来,确认到从体积效应到界面效应的转变是在减小的Co / Ni多层厚度降至2.1 nm时DW运动方向的变化。绝热自旋传递转矩(STT)在较厚状态下主导DW运动,而由于自旋霍尔效应(SHE)引起的界面转矩在较薄状态下引起DW运动。但是,在较早的研究中,对于具有SiO / [Tb(3.2Å)/ Co(2.6Å)]层状结构的不对称界面线,我们仍然可以观察到SOT诱导的DW运动,厚度约为10 nm。 / Pt(20Å)。我们的电线中SOT的高效率可以通过添加Co超薄层中的外在SHE来解释,这是由于Tb稀土杂质在SOI的帮助下在Co层中引起的偏斜散射。在这项研究中,我们介绍了具有不同分层结构的Tb / Co导线中电流引起的DW运动。通过改变Co超薄层的厚度,Tb / Co界面的数量以及Tb-Co合金磁性层的形成来调整外部SHE。

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  • 来源
    《IEEE Magnetics Conference》|2015年|1-1|共1页
  • 会议地点 Beijing(CN)
  • 作者

    Do, B.; Awano, H.;

  • 作者单位

    Toyoya Technol. Inst. Nagoya Japan;

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