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Magnetic Heusler alloys and CPP GMR: Technology breakthrough and potential application in magnetic recording

机译:磁性Heusler合金和CPP GMR:技术突破和在磁记录中的潜在应用

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Magnetic Heusler alloys that benefit from their half-metal characteristics have recently seen significant progresses in material researches and process development. As a result, current perpendicular to plane (CPP) giant magnetoresistance (GMR) has been proportionally enhanced, at least but not limited, by an order of magnitude in devices that contain such magnetic Heusler alloys and all-metal layer stacking. Amongst a wide selection of ferromagnetic Heusler alloys, CoMnSi and its variations show good process compatibility and high spin polarization that yields large CPP GMRs in spin valves. Recent experiments in Heusler alloy based spin valve structures epitaxially-grown on MgO (001) substrates have shown the room temperature ΔR/R can be as large as 75% in the CoMnFeSi Heusler alloy based pseudo spin valves grown on MgO (001) substrates. As a major application, CPP GMR reader technology has been extensively investigated in the last few years in response for the demand for increasing areal density in magnetic recording. One of recent industrial efforts shows that ΔR/R of 18 %, ΔRA= 9.0 mΩ μm, is achievable in the reader sensors fabricated using the same CoMnFeSi Heusler alloy based and antiferromagnetically pinned spin valves grown on AlTiC wafers. First and most important, this implication of these results is that the advance of technology provides large potential to the CPP GMR in future reader sensor development to accommodate all the requirements for SNR improvement and solution to spin torque effect induced instability in devices. Second, a large compromise in the CPP GMR is observed when the film stack or the reader sensor gap is reduced in thickness. This originates from the nature of stack-structure-dependent electron transport and process imperfectness and constraints in reader sensor building. With strict requirement for high areal density recording at 1TB/in and beyond, for the t- me being, dealing with this compromise with the scaling down of the reader sensor gap will be a major challenge and the focus of effort to better shape this technology as a success. This talk will briefly review and discuss recent magnetic Heusler material and reader sensor development and limiting factors that might affect the use of such magnetic material in device fabrication and operation.
机译:得益于其半金属特性的磁性Heusler合金最近在材料研究和工艺开发方面取得了重大进展。结果,在包含这种磁性Heusler合金和全金属层堆叠的器件中,垂直于平面(CPP)的巨磁阻(GMR)的电流已按比例增加,至少但不限于一个数量级。在多种铁磁Heusler合金中,CoMnSi及其变体表现出良好的工艺兼容性和高自旋极化能力,从而在自旋阀中产生大的CPP GMR。最近在MgO(001)衬底上外延生长的基于Heusler合金的自旋阀结构中进行的实验表明,在MgO(001)衬底上生长的基于CoMnFeSi Heusler合金的伪自旋阀中,室温ΔR/ R可以高达75%。作为主要应用,在最近几年中,CPP GMR读取器技术已经得到了广泛的研究,以响应不断增长的磁记录面密度的需求。最近的一项工业努力表明,使用在AlTiC晶片上生长的相同的CoMnFeSi Heusler合金基和反铁磁固定的自旋阀制造的读取器传感器中,可实现ΔR/ R为18%,ΔRA= 9.0mΩμm。首先,也是最重要的,这些结果的含义是,技术的进步为CPP GMR在未来的读取器传感器开发中提供了巨大的潜力,以适应SNR改善和解决旋转转矩效应引起的设备不稳定性的所有要求。其次,当薄膜叠层或读取器传感器间隙的厚度减小时,会在CPP GMR中看到很大的折衷。这源于依赖于堆栈结构的电子传输的性质,过程的不完善性以及阅读器传感器构建中的约束。由于严格要求在1TB / in及更高的区域进行高面密度记录,因此,要缩小读卡器传感器间隙来应对这种折衷方案将是一项重大挑战,并且是致力于改进该技术的工作重点作为成功。本演讲将简要回顾和讨论最近的Heusler磁性材料和阅读器传感器的发展以及可能影响在设备制造和操作中使用此类磁性材料的限制因素。

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