Recent progress on the quantum-dot avalanche photodiode (QDAP)

摘要

Mid-infrared sensors in the 3–25 µm range are very important devices in applications such as medical imaging, night vision, fire-fighting equipment, and defense and security applications. Among the different technologies available, the quantum dot infrared photodetectors (QDIPs) and the quantum dots-in-a-well (DWELL) photodetectors are among the promising alternatives for high background threshold applications due to their beneficial characteristics, which include normal absorption of the incident radiation and low dark current. In addition, QDIP and DWELL detectors benefit from a mature growth and processing technology of III-V semiconductors, making it possible to produce devices with good spatial uniformity over a large area. This characteristic is essential for fabricating large area focal plane arrays (FPAs).