Improvement of PLED lifetime using inorganic Mg-Zn-F thin film passivation

机译：使用无机Mg-Zn-F薄膜钝化提高PLED寿命

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We manufactured a novel gas permeation thin film passivation by using inorganic Mg-Zn-F. The film was formed about 200 nm and WVTR was reached 10

机译：我们通过使用无机Mg-Zn-F制造了一种新型的气体渗透薄膜钝化剂。膜形成约200 nm，WVTR达到10

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《IEEE LEOS Annual Meeting Conference Proceedings;LEOS '09》|2009年|73-74|共2页
会议地点 Belek-Antalya(TR);Belek-Antalya(TR)
作者
Kang, Byoung-Ho; Kim, Do-Eok; Seo, Jun-Seon; Kim, Jae-Hyun; Lee, Jung-Hee; Kwon, Dae-Hyuk; Lee, Hyeong-Rag; Kang, Shin-Won;
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School of Electrical Engineering and Computer Science Kyungpook National University Republic of Korea;

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专利

1. Evaluation of thin film passivation using inorganic Mg-Zn-F heterointerface for polymer light emitting diode [J] . Do-Eok Kim, Byoung-Ho Kang, Seok-Min Hong, Thin Solid Films . 2010,第14期

机译：无机Mg-Zn-F异质界面对聚合物发光二极管薄膜钝化的评估
2. Evaluation of Inorganic Mg-Zn-F Thin-Film Passivation for OLED Application [J] . Kim DE, Kang BH, Kim SH, Journal of the Korean Physical Society . 2009,第1期

机译：无机Mg-Zn-F薄膜钝化在OLED中的应用评估
3. Enhancement of PLED lifetime using thin film passivation with amorphous Mg‐Zn‐F [J] . Byoung‐Ho Kang, Do‐Eok Kim, Jae‐Hyun Kim, Journal of information display . 2010,第1期

机译：使用非晶态Mg-Zn-F薄膜钝化来提高PLED寿命
4. Improvement of PLED lifetime using inorganic Mg-Zn-F thin film passivation [C] . Byoung-Ho Kang, Do-Eok Kim, Jun-Seon Seo, LEOS Annual Meeting . 2009

机译：使用无机Mg-Zn-F薄膜钝化改善寿命
5. Charged Silicon Nitride Films: Field-Effect Passivation of Silicon Solar Cells and a Novel Characterization Method through Lifetime Measurements. [D] . Yang, Qun. 2014

机译：带电氮化硅膜：硅太阳能电池的场效应钝化和通过寿命测量的新型表征方法。
6. Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation [O] . Kyungsoo Jang, Youngkuk Kim, Pham Duy Phong, 2019

机译：具有a-Si：H表面钝化的P沟道LTPS薄膜晶体管的电性能改善
7. Enhancement of PLED lifetime using thin film passivation with amorphous Mg‐Zn‐F [O] . Byoung‐Ho Kang, Do‐Eok Kim, Jae‐Hyun Kim, 2010

机译：用薄膜钝化与无定形Mg-Zn-F的增强寿命增强

Improvement of PLED lifetime using inorganic Mg-Zn-F thin film passivation

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