Growth and properties of high areal density Ga

机译：高面密度Ga的生长和性质

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P quantum dots grown on GaP substrate by molecular beam epitaxy and report a detailed structural and optical analysis. The composition dependent luminescence is evaluated and linked to the morphology.

机译：通过分子束外延生长在GaP衬底上的P量子点，并报告了详细的结构和光学分析。评估与组成有关的发光并将其与形态联系起来。

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《IEEE LEOS Annual Meeting Conference Proceedings;LEOS '09》|2009年|149-150|共2页
会议地点 Belek-Antalya(TR);Belek-Antalya(TR)
作者
Gerhard, S.; Baumann, V.; Hofling, S.; Forchel, A.;
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Technische Physik Wilhelm Conrad RÃ¶ntgen Research Center for Complex Material Systems UniversitÃ¤t WÃ¼rzburg Am Hubland D-97072 Germany;

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1. Effects of rapid thermal annealing on the optical properties of InAs/(In)GaAs quantum dots with different areal density [J] . Zhan-Guo Li, Ming-hui You, Guo-Jun Liu, Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic . 2014,第4期

机译：快速热退火对不同面密度的InAs /（In）GaAs量子点光学性能的影响
2. Optical properties of 1.3 μm InAs/GaAs bilayer quantum dots with high areal density [J] . C. Y. Ngo, S. F. Yoon, D. R. Lim, Applied Physicsletters . 2009,第18期

机译：具有高面密度的1.3μmInAs / GaAs双层量子点的光学特性
3. Sloped Bottom Tanks and Areal Density - Part Ⅱ: Functional Behavior of Projected Areal Density [J] . Tracy Stover Transactions of the American nuclear society . 2018,第JUNa期

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4. Growth and Properties of High Areal Density Ga_xIn_(1-x)P Quantum Dots on GaP Substrate [C] . S. Gerhard, V. Baumann, S. Hofling, LEOS Annual Meeting . 2009

机译：间隙基材上高面密度Ga_In_（1-X）P量子点的生长和性能
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Growth and properties of high areal density Ga

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