Ground coplanar waveguide to rectangular waveguide transition

摘要

In this study, we propose a very simple and easy-to-fabricate transition from a low loss ground coplanar waveguide (GCPW) with sidewalls to rectangular waveguide. It consists of two steps of transition, one from an ordinary CPW to GCPW with side walls, and the other from GCPW to rectangular waveguide. Since the design is very simple and the features are aligned with the Cartesian coordinates, it highly compatible with microfabrication processes and can be fabricated using either lithography of thick photoresists or multi-step deep reactive ion etching (DRIE) of silicon. A back to back structure is fabricated by conventional machining methods at Ka-band to validate the results.