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A new dynamic, self-consistent electro-thermal model of power HBTsand a novel interpretation of thermal collapse loci in multi-fingerdevices

机译:功率HBT的新动态,自洽电热模型以及多指设备中热塌缩基因座的新颖解释

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A new self-consistent dynamic electro-thermal model for power HBTsnis presented coupling a circuit-oriented electrical model fitted onnexperimental data with a full frequency domain thermal model. Thenthermal model provides the exact frequency behaviour of the devicenthermal impedance through a quasi-3D approach, rather than a simplensingle- or multi-pole rational approximation. The self-consistentnsolution is achieved, in large-signal periodic conditions, throughnharmonic balance analysis. The dynamic model enables us to discuss thenbehaviour of thermal collapse in multi-finger devices not only in DC,nbut also in AC conditions. In particular, a new interpretation isnproposed for the thermal collapse loci of such devices in terms ofnbifurcations, thus providing a simpler and more straightforwardnstability criterion with respect to those already presented in thenliterature
机译:针对功率HBTsnis的一个新的自洽动态电热模型,提出了一种将基于实验数据的电路定向电模型与全频域热模型耦合的方法。然后,热模型通过准3D方法(而不是简单的单极或多极有理逼近)提供了设备热阻抗的确切频率行为。通过大谐波周期分析,可以在大信号周期条件下实现自洽解决方案。动态模型使我们能够讨论不仅在直流条件下,而且在交流条件下,多指器件中的热塌陷行为。特别是,对于这种设备的热塌陷位点,在分叉方面提出了新的解释,从而相对于当时的文献已经提供了一种更简单,更直接的稳定性标准。

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