Department of Electrical Engineering University of Washington, Box 352500 Seattle, WA 98195-2500, USA;
Department of Electrical Engineering University of Washington, Box 352500 Seattle, WA 98195-2500, USA;
Department of Electrical Engineering University of Washington, Box 352500 Seattle, WA 98195-2500, USA;
Department of Electrical Engineering University of Washington, Box 352500 Seattle, WA 98195-2500, USA;
Analogy Inc. P.O.Box 1669 Beaverton, OR 97075, USA;
机译:垂直功率器件宽带隙半导体的高压和高温性能比较
机译:垂直功率器件宽带隙半导体的高压和高温性能比较
机译:用于高功率应用的宽带隙半导体器件的高温性能
机译:定义功率半导体器件的标准性能水平
机译:碳化硅功率结场效应晶体管的物理模型和半导体器件的模型级别。
机译:半导体:高性能有机半导体器件的接口设计原理(Adv。Sci。6/2015)
机译:基于SI,SiC和GaN的功率半导体器件结合电流馈电DC-DC谐振转换器的比较性能和评估研究
机译:III-V半导体量子阱激光器及相关光电器件(Onsilicon)。氧化物定义的半导体量子阱激光器和光电器件:al基III-V天然氧化物