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A novel architecture of the 3D stacked MRAM L2 cache for CMPs

机译:用于CMP的3D堆叠MRAM L2高速缓存的新颖架构

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Magnetic random access memory (MRAM) is a promising memory technology, which has fast read access, high density, and non-volatility. Using 3D heterogeneous integrations, it becomes feasible and cost-efficient to stack MRAM atop conventional chip multiprocessors (CMPs). However, one disadvantage of MRAM is its long write latency and its high write energy. In this paper, we first stackMRAM-based L2 caches directly atop CMPs and compare it against SRAM counterparts in terms of performance and energy. We observe that the direct MRAM stacking might harm the chip performance due to the aforementioned long write latency and high write energy. To solve this problem, we then propose two architectural techniques: read-preemptive write buffer and SRAM-MRAM hybrid L2 cache. The simulation result shows that our optimized MRAM L2 cache improves performance by 4.91% and reduces power by 73.5%compared to the conventional SRAM L2 cache with the similar area.
机译:磁性随机存取存储器(MRAM)是一种很有前途的存储技术,具有快速的读取访问,高密度和非易失性。使用3D异构集成,将MRAM堆叠在常规芯片多处理器(CMP)之上变得可行且具有成本效益。但是,MRAM的缺点之一是写入延迟长且写入能量高。在本文中,我们首先在CMP之上直接基于stackMRAM的L2高速缓存,并将其与SRAM对应的性能和能耗进行比较。我们注意到,由于上述长写入延迟和高写入能量,直接MRAM堆叠可能会损害芯片性能。为了解决这个问题,我们然后提出了两种架构技术:抢占式写缓冲区和SRAM-MRAM混合L2高速缓存。仿真结果表明,与具有类似面积的传统SRAM L2缓存相比,我们优化的MRAM L2缓存将性能提高了4.91%,功耗降低了73.5%。

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