Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245;
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245;
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245;
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245;
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245;
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245;
AlGaN-GaN heterostructure; HEMTs; Schottky diodes; reliability; radiation effects; defects; traps;
机译:AlGaN-GaN高电子迁移率晶体管中的反向肖特基栅极电流
机译:用5 MeV质子辐照的AlGaN / GaN高电子迁移率晶体管的光电特性
机译:在Al_xGa_(1-x)As / InGaAs(X = 0.75)拟态高电子迁移率晶体管中使用光洗处理的金属-绝缘体-半导体肖特基二极管的电特性
机译:质子前和后质子辐照的AlGaN-GaN高电子迁移率晶体管和AlGaN肖特基二极管的陷阱和缺陷
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
机译:AlGaN-GaN高电子迁移率晶体管中的反向肖特基栅极电流