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Silicon photonic wire evanescent field sensors: sensor arrays and instrumentation

机译:硅光子线瞬逝场传感器:传感器阵列和仪器

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We are developing a photonic wire evanescent field (PWEF) sensor chip using 260 nm × 450 nm cross-section silicon photonic wire waveguides. The waveguide mode is strongly localized near the silicon surface, so that light interacts strongly with molecules bound to the waveguide surface. The millimeter long sensor waveguides can be folded into tight spiral structures less than 200 micrometers in diameter, which can be arrayed at densities up to ten or more independent sensors per square millimeter. The long propagation length in each sensor element gives a response to molecular binding much better than currently available tools for label-free molecular sensing. Cost of instrumentation, cost per measurement, ease-of-use, and the number of sensors that can be simultaneously monitored on a sensor array chip are equally important in determining whether an instrument is practical for the end user and hence commercially viable. The objective of our recent work on PWEF sensor array chips and the associated instrumentation is to address all of these issues. This conference paper reviews our ongoing work on the photonic wire sensor chip design and layout, on-chip integrated fluidics, optical coupling, and chip interrogation using arrays of grating couplers formed using sub-wavelength patterned structures.
机译:我们正在开发使用260 nm×450 nm截面硅光子线波导的光子线瞬逝场(PWEF)传感器芯片。波导模式强烈地局限在硅表面附近,因此光与结合到波导表面的分子强烈相互作用。毫米长的传感器波导可以折叠成直径小于200微米的紧密螺旋结构,其排列密度可以达到每平方毫米最多十个或更多独立传感器。每个传感器元件中的长传播长度比现有的无标记分子传感工具对分子结合的响应要好得多。仪器成本,每次测量成本,易用性以及可以在传感器阵列芯片上同时监控的传感器数量对于确定仪器对于最终用户是否实用并因此具有商业可行性是同等重要的。我们最近在PWEF传感器阵列芯片和相关仪器上进行工作的目的是解决所有这些问题。该会议论文回顾了我们正在进行的有关光子线传感器芯片设计和布局,片上集成流体技术,光耦合以及使用由亚波长图案化结构形成的光栅耦合器阵列进行芯片询问的工作。

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