RECENT DEVELOPMENTS IN ADHESION-ENHANCED HIGH-VACUUM BONDING BY IN SITU PLASMA SURFACE PRECLEANING

摘要

The integration of dissimilar materials by conventional wafer bonding with high bonding energies is restricted to materials with very low mismatch of the thermal expansion. During thermal treatment of dissimilar bonded materials, bending, interface, precipitates and micro bubbles are revealed after the annealing. However, conventional bonding without a further heat treatment leads in general to low bonding strengths due to a high surface barrier. By low energy ions and neutral atoms bombarding, the surface contaminants can be removed and the adhesion will increase for high-vacuum wafer bonding. First results on adhesion-enhanced high-vacuum wafer bonding by in situ surface plasma cleaning will be presented.