Self-Aligned μTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond

摘要

A novel self-aligned μTrench-based cell architecture for Phase Change Memory (PCM) process is presented. The low-programming current and the good dimensional control of the sub-lithographic features achieved with the μTrench structure are combined with a self-aligned patterning strategy that simplify the integration process in term of alignment tolerances and of number of critical masks. The proposed architecture has been integrated in a 90nm 128Mb vehicle with programming currents of 300μA and good distributions, demonstrating its suitability for the production of high-density PCM arrays at 90nm and beyond.