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Gold Thin Film as Transition Layer in Electrode Design of Na2O.PbO-Nb2O5-SiO2 Glass-ceramic Capacitors

机译:Na2O.PbO-Nb2O5-SiO2微晶玻璃电容器电极设计中的金薄膜作为过渡层

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摘要

The electrical properties and microstructure of Na2O.PbO.Nb2O5.SiO2 glass-ceramic capacitors with pre-sputtered gold film as the transition layer in electrode design were investigated. SEM observation and EDS analysis showed that the presence of gold transition layer would eliminate enormously the Ag diffusion into the dielectric layer, resulting in a smooth and dense interface contact with less porous defects near the electrode/dielectric layer region. The electrical property results indicated that the leakage current and dielectric loss had decreased by about an order of magnitude and 20%, respectively. These results were explained by the weakened diffusion of silver into dielectric layer due to the presence of gold transition layer in between the silver paste/dielectric interface.
机译:研究了预溅射金膜作为过渡层的Na2O.PbO.Nb2O5.SiO2玻璃陶瓷电容器的电学性能和微观结构。 SEM观察和EDS分析表明,金过渡层的存在将极大地消除Ag扩散到介电层中的情况,从而实现平滑而致密的界面接触,并在电极/介电层区域附近出现较少的多孔缺陷。电性能结果表明,漏电流和介电损耗分别降低了大约一个数量级和20%。这些结果可以解释为由于在银浆/介电界面之间存在金过渡层,导致银向介电层的扩散减弱。

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  • 来源
  • 会议地点 Qingdao(CN)
  • 作者单位

    Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals,Beijing 100088, China;

    Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals,Beijing 100088, China;

    Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals,Beijing 100088, China;

    Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals,Beijing 100088, China;

    Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TB346;
  • 关键词

    transition layer; gold thin film; electrode structure; glass-ceramic capacitor;

    机译:过渡层;金薄膜;电极结构;玻璃陶瓷电容器;

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