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CHEMICAL AND MORPHOLOGICAL CHANGES AT Al_2O_3/NiAl INTERFACES AND THEIR RELATIONSHIP TO SCALE ADHESION

机译:Al_2O_3 / NiAl界面的化学和形态变化及其与结垢的关系

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Ni-(40,50)at%Al alloys with different C and S contents were oxidized at 1000 -1150℃ for various times in oxygen. Auger electron microscopy was used to study the interface chemistry after scale spallation in ultra high vacuum. The interfacial failure stresses were determined with a tensile pull tester and they were related to the interfacial pore density. Results show that sulfur did not segregate to the Al_2O_3/Ni50Al interface even after extended oxidation times. Small amounts, however, segregated to the Al_2O_3/Ni40Al interface. The difference in behavior may be related to the surface energy difference between Ni50Al and Ni40Al. On the interfacial void faces of Ni50Al, C first segregated, then it was replaced by S after longer oxidation times; the amount of segregants varied with different crystallographic orientation of the void face. On Ni40Al, S segregated much earlier on the void faces due to a faster diffusion rate in the Ni-rich NiAl. The apparent S diffusivity in Ni50Al and Ni40Al at 1000℃ was determined to be 10~(-9) and 6x10~(-9) cm~2/s respectively. Excess sulfur in Ni40Al greatly increased the interfacial pore density. Preliminary results on interfacial failure stress showed that it decreased with increasing pore density, regardless of whether S was present at the interface, indicating that the major detrimental effect of S on scale adhesion may be to enhance interfacial pore formation.
机译:C和S含量不同的Ni-(40,50)at%Al合金在1000 -1150℃下于氧气中被氧化多次。用俄歇电子显微镜研究超高真空下水垢剥落后的界面化学。用拉力测试仪测定界面破坏应力,它们与界面孔隙密度有关。结果表明,即使延长氧化时间,硫也不会偏析到Al_2O_3 / Ni50Al界面上。然而,少量被隔离到Al_2O_3 / Ni40Al界面。行为上的差异可能与Ni50Al和Ni40Al之间的表面能差异有关。在Ni50Al的界面空洞面上,C首先偏析,然后经过较长的氧化时间后被S取代;隔离剂的量随空隙面的不同晶体学取向而变化。在Ni40Al上,由于富Ni的NiAl中扩散速度较快,S在空穴面上的分离早得多。在1000℃下,Ni50Al和Ni40Al的表观S扩散系数分别为10〜(-9)和6x10〜(-9)cm〜2 / s。 Ni40Al中过量的硫极大地增加了界面孔密度。界面破坏应力的初步结果表明,无论界面处是否存在S,其随孔隙密度的增加而降低,这表明S对结垢的主要有害作用可能是增强界面孔隙的形成。

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