首页> 外文会议>Electrochemical Society(ECS) Meeting;Symposium on Chemical Mechanical Polishing 9; 20080518-23;20080518-23; Phoenix,AZ(US);Phoenix,AZ(US) >Effect of Alkaline Agent with Organic Additive in Colloidal Silica Slurry on Polishing Rate Selectivity of PoIysilicon-to-Si02 in Polysilicon CMP
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Effect of Alkaline Agent with Organic Additive in Colloidal Silica Slurry on Polishing Rate Selectivity of PoIysilicon-to-Si02 in Polysilicon CMP

机译:胶体二氧化硅浆料中碱性添加剂与有机添加剂对多晶硅CMP中Polysilicon-to-SiO2抛光速率选择性的影响

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摘要

We have studied the effects of varying the size and the concentration of the abrasive in colloidal silica slurry and the concentration of different alkaline agent with organic polymer were investigated. We found that the surface roughness of the polysilicon film with TMAH was better than other alkaline agent. In addition, with increasing TMAH concentration, the polishing rate of polysilicon and the polysilicon-to-oxide polishing rate selectivity were reduced after an initial increase. And the organic polymer suppresses the polishing rate of the oxide film. We explained the reason by difference of hydrophobicity between polysilicon and oxide film with addition of alkaline agent and PAM in order to elucidate the mechanism of increase in polysilicon-to-oxide polishing rate selectivity.
机译:我们研究了改变胶体二氧化硅浆料中磨料的尺寸和浓度的影响,并研究了有机聚合物中不同碱性试剂的浓度。我们发现含TMAH的多晶硅膜的表面粗糙度优于其他碱性试剂。此外,随着TMAH浓度的增加,多晶硅的抛光速率和多晶硅至氧化物的抛光速率选择性在初始增加后降低。并且有机聚合物抑制了氧化膜的抛光速率。我们通过添加碱性试剂和PAM的多晶硅和氧化膜之间的疏水性差异来解释其原因,以便阐明提高多晶硅对氧化物抛光速率选择性的机制。

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