Characterization of a Novel Radical Nitrogen Plasma Source for Semiconductor Nitridation

摘要

Semiconductor nitridation for interface passivation has a subject of study for many years. Numerous techniques have been used, with plasma and thermal nitridation being the most common and successful. There are, however, disadvantages to both: thermal techniques can exceed the thermal budget for Ⅲ-Ⅴ materials and plasma subjects samples to damaging, high energy ions. This work aims to investigate a newly developed, fully remote, radical nitrogen plasma source. The system allows for low process temperatures and is damage free. Ultrathin nitridation films grown on silicon with this system have been characterized using x-ray photoelectron spectroscopy (XPS). The effects of both time and temperature on film growth were studied. Zirconium oxide on silicon metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated to study the passivation effectiveness of the nitridation layer.