Linear CID Sensor Array with On-Chip Analog Memory for Time-Resolved Scientific Applications

摘要

The attributes of the scientific-grade 4k linear CID51 sensor are presented. The CID51 sensor is fabricated using 0.18 um technology. The 0.18 um design rules permit proximity-coupling of the two photogates within the pixel required for non-destructive readout of the charge. The 14 um by 50 um pixels are arranged on two evenly staggered 2080-pixel rows. The result is a randomly addressable 4160 pixel array with an effective pitch of 7 microns and an effective height of 100 microns. The sensor incorporates parallel pixel processing with on-chip correlated double sampling. The critical unique feature of the CID51 is the 32 analog row storage registers (RSR) per pixel. These RSRs allow for the time resolved sampling of the 4160 pixel spectrum and can be randomly read out at rates as high as 8 MHz. The signal storage of up to 32 samples per pixel is non-destructive allowing for the integration of spectroscopic events with unprecedented microsecond time resolution. Alternatively, because pixels can be randomly accessed for readout or reset, intensely illuminated pixels can be quantitatively sampled and rapidly cleared of photon-generated charge, while weakly illuminated pixels are simultaneously allowed to integrate. Thus, the effective integration time can be varied from pixel to pixel based upon the observed photon flux vastly expanding dynamic range. Full spectrum acquisition provides all of the spectral content, including background continuum information for accurate photometry and spectrum to spectrum calibration. The CID51 device is suited for scientific applications demanding high dynamic range and/or time resolved capabilities.