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Self-organization as a means to suppress and control defect formation in silicon

机译:自组织是抑制和控制硅中缺陷形成的一种手段

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It was established that in any phase changes in Si (realized by self-organization), the concentrations of thermal donors (TDs) and other defects change in the opposite directions with changes in the parameters of state. This feature of self-organization makes it possible to obtain silicon with low densities of defects. direct c 1999 Elsevier Science S.A. All rights reserved.
机译:已经确定,在硅的任何相变中(通过自组织实现),随着状态参数的变化,热供体(TD)和其他缺陷的浓度沿相反的方向变化。自组织的这一特征使得可以获得具有低缺陷密度的硅。直接c 1999 Elsevier Science S.A.保留所有权利。

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