Ionisation and trapping of hydrogen at SiO_2 interfaces

摘要

Annealing of interfaces between SiO-2 and (111)Si, (100)Si in H_2 in the temperature range 450-800 deg C is found to introduce a considerable density (up to 10~13 cm~-2) of positively charged centres. There is no comparable density of dangling bonds initially present nor generated during the annealing at the Si/SiO_2 interfaces or in the SiO_2 layre that could account for the observed hydrogen bonding. Therefore, the hydrogen is suggested to be trapped in the positively charged valence alternation state 3-fold coordinated oxygen resembling the well known hydronium ion (H_3O)~+. direct c 1999 Elsevier Science S.A. All rights reserved.