P-type conductivity is normally produced in silicon carbide by doping with Al or B. The aluminum atom substitutes for silicon in the SiC latice. Several studies have shown that nitrogen, which substitutes for carbon atoms and produces n-type conductivity in SiC, sits at the two inequivalent lattice sites in 4H-SiC, and two N activation energies of 53 meV (h) and 100 meV (k) have been reported.
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