Recent progress in crystal growth of wide bandgap group III nitrides on highly-mismatched substrates has enabled us to produce high-quality GaN, AlGaN, GaInN and quantum well structures. High-performance blue and green light-emitting diodes and room temperature operation of nitride-based laser diodes have also been realized. Today, steady progress is being made in the areas of crystal growth and device performance. Howver, much furthe advances are requried in many areas of materials science and device fabrication of the nitrides.
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