A molecular dynamics study of step motions on vicinal silicon surfaces

摘要

A Molecular Dynamics simulation method has been applied to the motion of steps on a surface vicinal to {100} in Si. Undulation of the stetps and 'kissing sites' are observed to arise from thermal fluctuations at 300 deg-K. The dependence of the characteristic energy of these configurations on the terrace width complies with a free fermion picture which also includes dipolar and nearest neighbours interactions.