Electronically-enhanced reaction of process-induced defects in GaAs

摘要

The present paper reviews current understanding on enhanced reactions of process-induced defects in GaAs under electronic excitation. Device processing to be employed for point defect generation is Be ion implantation and Ar plasma etching. It is shown that reduction of electronic active centers is clearly enhanced by annealing under forward bias appication and by annealing under reverse bias application at temperature as low as 200 deg. The enhancement mechanisms are discussed in terms of recombination-enhanced defect reaction and structural instability induced by charge state effect.