Interface defects and rectification properties of heterojunctions between solid C60 and GaAs

摘要

Solid C60/GaAs contacts were fabricated by growing solid C60 films on both n-type and p-type GaAs (100) substrates through vacuum deposition. The electronic states at C60/GaAs interfaces were studied. Both C60-GaAs and C60/p-GaAs contcts were found to be strong rectification junctions with a rectifying ratio higher than 10~6 at a bias of +- 1.0V. Two distinct traps were also observed at the C60/GaAs Interfaces with deep level transient spectroscopy (DLTS); one is the electron trap at 0.35 eV below the GaAs conduction band and the other is a hole trap at 0.45 eV above the GaAs valence band.