Carbon doping into GaAs using low-energy hydrocarbon ions

摘要

The role hydrogen (H) in carbon (C)-doped GaAs was examined by co-doping of C and H atoms using low-energy hydrocarbon (CH~+ and CH_3~+) ions. Experiments were carried out using the combined ion beam and molecular beam epitaxy (CIBMBE) system. Samples were characterized by low-temperature photoluminescence at 2K and Hall effect measurements at room temperature. Results show that incorporated C atoms are optically and electrically activated as acceptors even by hydrocarbon ion impingement. The effect of H incorporation was found to be noticeable when impinged current density of CH_3~+ ion beam is high that produces equivalent net hole carrier concentration greater than approx approx (10)~(18) cm~(-3).