Charge state of copper-silicide precipitates in silicon and its application to the understanding of copper precipitation kinetics

摘要

Deep level spectra obtained on n-type silicon samples after copper diffusion and rapid quench give evidence of a positive charge state of the precipitates in p-type silicon. Non-exponential precipitation be-havior of interstitial Cu is demonstrated and explained. The possibility of Coulomb interaction between copper ions and copper precipitates is suggested and its influence on Cu precipitation kinetics is discussed.