Picosecond time-resolved studies of defect-related recombination in high resistivity CdTe, CdZnTe

机译：皮秒时间分辨的高电阻率CdTe，CdZnTe缺陷相关复合研究

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High resistivity CdTe:In and CdZnTe samples were studied by means of continuos and picosecond time-resolved photoluminescence (PL). Detected PL signal is affected by non-radiative trapping into defects, while radiative recombination has an excitonic character. Time-resolved PL can be described by two lifetimes: the first (30-60 ps) takes into account fast non radiative recombination, the second in the range 200-300 ps can be related to exciton decay.

机译：通过连续和皮秒时间分辨光致发光（PL）研究了高电阻率CdTe：In和CdZnTe样品。检测到的PL信号受非辐射陷入缺陷的影响，而辐射复合具有激子特性。时间分辨的PL可以用两个寿命来描述：第一个寿命（30-60 ps）考虑到了快速的非辐射复合，第二个寿命在200-300 ps范围内可能与激子衰减有关。

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《Defect and impurity engineered semiconductors II》|1998年|p.601-606|共6页
会议地点 San Francisco CA(US)
作者
G.Ghislotti; D.Ielmini; E.Riedo; M.Martinelli;
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正文语种 eng
中图分类无线电电子学、电信技术;
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4. Picosecond time-resolved studies of defect-related recombination in high resistivity CdTe, CdZnTe [C] . G.Ghislotti, D.Ielmini, E.Riedo, Symposium on defect and impurity engineered semiconductors . 1998

机译：PICOSECOND在高电阻率CDTE中缺陷相关重组的时间分辨研究，CDZNTE
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Picosecond time-resolved studies of defect-related recombination in high resistivity CdTe, CdZnTe

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