Long wavelength VCSELs at Honeywell

摘要

In this paper we describe both the 1310 and 1550 nm VCSEL development work at Honeywell, using both InP and GaAs substrates, and using both MOCVD and MBE. We describe the material systems, the designs, the growth techniques, and the promising results obtained and compare them to the needs of the communications industry. InGaAsN quantum well based VCSELs have been demonstrated to 1338 nm lasing at temperatures up to 90 C. Continuous wave InP based 1550 nm VCSELs have also been demonstrated.