Highly reliable oxide VCSELs for datacomm applications

摘要

In this paper we describe the processes and procedures that have been developed to ensure high reliability for Emcore's 850 nm oxide confined GaAs VCSELs. Evidence from on-going accelerated life testing and other reliability studies that confirm that this process yields reliable products will be discussed. We will present data and analysis techniques used to determine the activation energy and acceleration factors for the dominant wear-out failure mechanisms for our devices as well as our estimated MTTF of greater than 2 million use hours. We conclude with a summary of internal verification and field return rate validation data.