首页> 外文会议>Conference on Ultrafast Phenomena in Semiconductors and Nanostructure Materials; 20080120-23; San Jose,CA(US) >Ultrafast Time-Resolved Photoluminescence of Zn-Se-Te Multilayers with Type-II ZnTe/ZnSe Quantum Dots
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Ultrafast Time-Resolved Photoluminescence of Zn-Se-Te Multilayers with Type-II ZnTe/ZnSe Quantum Dots

机译:具有II型ZnTe / ZnSe量子点的Zn-Se-Te多层膜的超快时间分辨光致发光

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摘要

Time-resolved photoluminescence (TRPL) across the full spectrum of a 240 layer ZnTe/ZnSe super-lattice structure has been performed using a femtosecond Ti-Sapphire laser and a streak camera system for detection. A significant change of the PL lifetime is observed across the emission spectrum decreasing smoothly from ~ 100 ns at 2.35 eV, to less than a few nanoseconds at 2.8 eV. The increase of the PL lifetime in the low energy region of the emission spectrum is strong evidence to support the formation of type-II quantum dots (QDs) from excitons bound to clusters of Te-atoms. In such QDs the confined holes and the free electrons are spatially separated, thus increasing the radiative lifetime. This result is consistent with recent photoluminescence (PL) measurements in which evidence of the combined contribution of excitons bound isoelectronically to Te-atoms, and type-II QDs was observed.
机译:已经使用飞秒钛蓝宝石激光器和条纹照相机系统进行了240层ZnTe / ZnSe超晶格结构全光谱的时间分辨光致发光(TRPL)。在整个发射光谱中观察到PL寿命的显着变化,从2.35 eV的〜100 ns逐渐减小到2.8 eV的几纳秒。在发射光谱的低能量区域中PL寿命的增加是有力的证据来支持由与Te原子簇结合的激子形成II型量子点(QD)。在这样的量子点中,受限的空穴和自由电子在空间上是分开的,从而延长了辐射寿命。该结果与最近的光致发光(PL)测量结果一致,在该测量中,观察到了激子等电电子结合到Te原子和II型QD的组合贡献的证据。

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